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Home Peripherals & Modules Peripherals DRAM Memory Module DDR3 Memory

AQD-D3L8GN16-SG1 MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM

MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM
  • MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM
  • MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM

  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip
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Specifications
Category
Attribute
Value
Memory
Capacity
8 GB
Memory
Chip Manufacturer
SAMSUNG
Memory
Chip Organization
512M X 8
Memory
Feature
Unbuffered
Memory
Frequency
1600 Mhz
Memory
Interface
240 pin
Memory
Manufacturer
Advantech
Memory
Operating Temperature
0 ~ 85°C (32 ~ 185°F)
Memory
PCB Height
1.18"
Memory
Rank
2 Rank
Memory
Voltage
1.35 V

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